Hitachi Electron Beam Absorbed Current(EBAC) Characterization System nanoEBAC NE4000
Probe unit |
|
Unit number |
4 |
Driving method |
Piezoelectric |
Fine stroke range |
5 µm (X,Y) |
Coarse stroke range |
6 mm (X,Y) |
Specimen stage / Base stage |
|
Specimen size |
25 mm × 25 mm × 1 mm thick or less |
Traverse position |
Measurement / Specimen exchange position |
Specimen exchange |
Air-locked exchange chamber |
Prober navigation |
Stage traverse to probe position |
Measurement position memory |
|
Probe coarse adjustment |
|
CCD image display |
Image display from lateral direction |
Electron optics |
|
Electron gun |
Cold field emission electron source |
Accelerating voltage |
0.5 kV to 30 kV |
Resolution |
15 nm (at 2 kV, WD=15 mm) |
Image shift |
±150 µm (at 2 kV, WD=15 mm) |
EBAC amplifier / Image display |
|
Amplifier type |
Current amplifier / Differential amplifier |
Image display |
SEM / EBAC (Single / Parallel / Overlay) |
Image processing |
Black and white reversal display, color display, brightness adjustment, slow scan integration, belt scan |
Dimensions and Weight
Main unit |
1,100 (W) × 1,550 (D) × 1,750 (H) mm, 850 kg |
Display unit |
1,000 (W) × 1,005 (D) × 1,200 (H) mm, |
Utility requirement
Room temperature |
15 - 25 °C |
Humidity |
60% RH or less |
Power |
AC100 V±10% 5 kVA (M5 crimp terminal) |
Grounding |
100Ω or less |